Physical Modeling of Igbt Turn on Behavior
نویسندگان
چکیده
Although IGBT turn on losses can be comparable to turn off losses, IGBT turn on has not been as thoroughly studied in the literature. Under clamped inductive load condition at turn on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. A physics-based IGBT model is used that has been proved accurate in the simulation of IGBT turn off. Both resistive and inductive turn on are considered. Discrepancies between model predictions and experimental results are discussed.
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تاریخ انتشار 2003